Narrow electroluminescence in bromide ligand-capped cadmium chalcogenide nanoplatelets

Colloidal zinc blende II–VI semiconductor nanoplatelets (NPLs) demonstrate as a promising class of materials for optoelectronic devices due to their unique excitonic characteristics, narrow emission linewidth, and quantum well-structure. Adopting heterostructures these nanocrystals allows tuning optical features enhances photostability, photoluminescence (PL), yield (QY), color purity further device integration. Exchanging carboxylate capping ligands on top bottom [001] facets CdSe NPLs with halide is an alternative achieve the aims spectral tunability improve surface passivation, but date there have been no reports integrating advantages ligand exchanged fabrication. In this work, we green electroluminescence (EL) bromide ligand-capped active emitters in electrically driven light emitting diode (LED) low turn-on voltage 3.0 V. We observed EL at 533.1 nm linewidth 19.4 nm, maximum luminance 1276 cd/m 2 , highest external efficiency (EQE) 0.803%. These results highlight ability exchange properties NPL-LEDs potential contributing region NPL-LEDs, demonstrating its future integration contribution high rendering index NPL displays.